Using just two NAND or inverter gates its possible to build a D type (or ‘toggle’) flip-flop with a push-button input. At power-up the output of gate N2 is at a logical ‘1’, ensuring that transistor T2 ...
SSD enthusiasts know all about SLC, MLC, and TLC, but there are some new acronyms in SSD town: V-NAND and CTF. Samsung announced in a press release last night that it has begun mass production of “3D ...
Toshiba today announced the development of the first 48-layer, three-dimensional flash memory. Based on a vertical stacking technology that Toshiba calls BiCS (Bit Cost Scaling), the new flash memory ...
It's getting increasingly expensive to continue along the chip trajectory predicted by Moore's Law, the observation that the number of transistors on a chip doubles every year or two. One way that ...
Samsung Electronics Develops First 16-Gigabit NAND Memory Using 50-nm Technology for Sharp Jump in Mobile Storage CapacitySamsung Electronics Develops First 16-Gigabit NAND Memory Samsung Electronics ...
Samsung has announced production of the first solid state drives (SSD) based on its new 3D V-NAND flash memory. V-NAND flash memories read and write twice as fast as conventional NAND memories, and ...
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